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Start of funding 01.01.2004
THz photomixer, based on InGaAs
Prof. Dr. Gottfried Döhler
Friedrich-Alexander-University of Erlangen-Nuremberg
Chair of Applied Physics
Dr. Stefan Malzer
Friedrich-Alexander-University of Erlangen-Nuremberg
Chair of Applied Physics
Prof. Dr. A. C. Gossard
University of California, Santa Barbara
Materials Department
At present, there are no compact and efficient THz-sources working at room temperature in the frequency range which represents the transition regime between ultra-high rf-technology and ultra-far IR-optics ("THz gap"). The need of THz-sources for space, environmental, chemical and biological sensing, however, has increased drastically during the past years. We have developed a novel concept for photomixers as THz-radiation sources. The working principle has recently been successfully demonstrated. The present implementation is based on GaAs-nanostructures incorporating ultrathin ErAs layers and uses lasers emitting at 850 nm. Future applications (ALMA project, e.g.) are planned for 1550 nm lasers which suggests using InGaAs as semiconducting material. Prof. A.C. Gossard's goup at UCSB is working on InGaAs/ErAs-nanostructures and has provided first test structures to us. These structures turned out to be ideally suited for our goals. Nanostructured devices will be used as photomixer devices (using our clean-room facitities at UE). The electrical and optical characterization will be also made in our laboratories. The photomixing experiments will be performed at UCSB in collaboration with Prof. Gossard and Prof. E.R. Brown. He has developed a 1550 nm photomixing set-up, which exactly matches our needs. We expect a THz-emitter with a conversion efficiency far above state-of-the-art solid state THz-emitters, which may be able to bridge the "THz gap".