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Start of funding 01.01.2008
Novel Magnetic Semiconductors for Efficient Spin Injection into Silicon
Dr. Dominique Bougeard
Technische Universität München
Walter Schottky Institut
Prof. Dr. A. C. Gossard
University of California, Santa Barbara
Materials Department
The implementation of spintronics semiconductor devices will give access to the additional degree of freedom offered by the spin compared to the well established charge-only based electronics. Our project studies magnetic semiconductors with the objective to control the population and the phase of the spin of an ensemble of particles. Introducing magnetic moments into mainstream semiconductors has proven to represent a crucial challenge for the implementation of spintronics devices. The objectives of our cooperation are the realisation of novel group IV-based magnetic semiconductors, a contribution to the understanding of the physical origin of a saturating Curie temperature in (Ga,Mn)As and the development of strategies for efficient spin injection into Si.